MAPC-A1558-AB
GaN on SiC Transistor, 1200 W, 65 V 1.2 - 1.4 GHz
The MAPC-A1558-AB is an 1200W packaged, partially-matched amplifier. The MAPC-A1558-AB operates up to 1.4 GHz and supports both defense and commercial-related avionics and radar applications. Under 65 V operation, the MAPC-A1558-AB typically achieves 1200 W of saturated output power with 16 dB of large signal gain and 68% drain efficiency via a 1.2 - 1.4 GHz reference design. Packaged in a thermally-enhanced, flange package, the MAPC-A1558-AB provides superior performance under long pulse operation allowing customers to improve SWaP-C benchmarks in their nextgeneration systems.
Product Specifications
- Part Number
- MAPC-A1558-AB
- Description
- GaN on SiC Transistor, 1200 W, 65 V 1.2 - 1.4 GHz
- Min Frequency(MHz)
- 1200
- Max Frequency(MHz)
- 1400
- Supply Voltage(V)
- 65
- PSAT Watt(W)
- 1200.0
- Gain(dB)
- 16.0
- Efficiency
- 68
Features
- Saturated Power: 1200 W
- Drain Efficiency: 68%
- Small Signal Gain: 16 dB
- Lead-Free Air Cavity Ceramic Package
- RoHS* Compliant