MAPC-A1107-AB
GaN on SiC Amplifier, 120 W, 28 V DC - 3 GHz
The MAPC-A1107 is a 120 W packaged, input matched amplifier utilizing a high performance, GaN on SiC production process. This amplifier supports both defense and commercial related applications. Offered in a thermally-enhanced flange package, the MAPC-A1107 provides superior performance under CW operation allowing customers to improve SWaP-C benchmarks in their next generation systems.
Product Specifications
- Part Number
- MAPC-A1107-AB
- Description
- GaN on SiC Amplifier, 120 W, 28 V DC - 3 GHz
- Min Frequency(MHz)
- 500
- Max Frequency(MHz)
- 3000
- Supply Voltage(V)
- 28
- Gain(dB)
- 20.0
- PSAT(dBm)
- 35
Features
- Output Power: 120 W @ 3 GHz
- Drain Efficiency: 66% @ 3 GHz
- Small Signal Gain: 20 dB @ 3 GHz
- Lead-Free Air Cavity Ceramic Package
- RoHS* Compliant