MAPC-A1001

GaN Amplifier 50 V, 50 W

The MAPC-A1001 is a GaN on Silicon Carbide HEMT D-mode amplifier suitable for 30 - 1400 MHz frequency operation. The device supports both CW and pulsed operation with minimum output power levels of 50 W (47 dBm) in a 5 x 6 mm plastic package. The MAPC-A1001 has a wide range of applications, including military radio communications, RADAR, avionics, digital cellular infrastructure, RF energy, and test instrumentation.

Product Specifications

Part Number
MAPC-A1001
Description
GaN Amplifier 50 V, 50 W
Min Frequency(MHz)
30
Max Frequency(MHz)
1400
Supply Voltage(V)
50
PSAT Watt(W)
50.0
Gain(dB)
15.9
Efficiency
61
Test Freq(GHz)
900.00
Package
5 x 6 mm DFN
PSAT(dBm)
47

Features

  • MACOM PURE CARBIDE Amplifier Series
  • Suitable for Linear & Saturated Applications
  • CW & Pulsed Operation: 50 W Output Power
  • 50 Ω Input Matched
  • 260°C Reflow Compatible
  • 50 V Operation
  • 100% RF Tested
  • RoHS* Compliant

Technical Resources

Datasheet


Order from MACOM

MAPC-A1001-AD000
Amplifier, 50W, 30-1400MHz, GaN-SiC, DFN
MAPC-A1001-ADSB1
Sample Board, MAPC-A1001
MAPC-A1001-ADTR1
Amplifier, 50W, 30-1400MHz, GaN-SiC, T&R