2 W, TR Chip 26 - 30 GHz

MAMF-FR1193FR1193-DIE is a 2 W high high-performance GaN TR Module designed to operate from 26 to 30 GHz and is offered in bare die form. It is fully matched across the frequency band. The MAMF-FR1193FR1193-DIE has 34 dBm of output power and 15% PAE and can be used as a power amplifier stage in Tx Mode. In Rx mode, this device has 3.8 dB of Noise Figure including the switch losses. The MAMF-FR1193FR1193-DIE is manufactured using a high performance 100 nm gate length GaN on Si HEMT power technology (D01GH). The MMIC uses gold bonding pads and backside metallization and is fully protected with silicon nitride passivation to obtain the highest level of reliability.