MAGB-102527-110A0P
GaN Amplifier 48 V, 110 W 2.5 - 2.7 GHz
The MAGB-102527-110A0P GaN HEMT D-mode amplifier is designed for base station applications and is optimized for 2.5 - 2.7 GHz modulated signal operation. This device supports pulsed and linear operation with peak output power levels to 110W (50.4 dBm) in a 7 x 10 mm DFN package.
Product Specifications
- Part Number
- MAGB-102527-110A0P
- Description
- GaN Amplifier 48 V, 110 W 2.5 - 2.7 GHz
- Min Frequency(MHz)
- 2500
- Max Frequency(MHz)
- 2700
- Supply Voltage(V)
- 48
- PSAT Watt(W)
- 110.0
- Gain(dB)
- 17.4
- Test Freq(GHz)
- 2.60
- Package
- 7 mm 16-lead HQFN Package
- PSAT(dBm)
- 50
- Package Category
- DFN
Features
- Optimized for Cellular Base Station Applications
- Designed for Digital Predistortion Error Correction Systems
- High Terminal Impedances for Broadband Performance
- 48 V Operation
- 100 % RF Tested
- RoHS* Compliant