MAGB-102327-012B0P

GaN Amplifier 48 V, 10 W 2.3 - 2.7 GHz

The MAGB-102327-012B0P is a wideband GaN HEMT D-mode amplifier. It is designed for base station applications and optimized for 2.3 - 2.7 GHz modulated signal operation. This device supports pulsed and linear operation with peak output power levels to 10 W (40 dBm) in a 4 mm DFN package.

Product Specifications

Part Number
MAGB-102327-012B0P
Description
GaN Amplifier 48 V, 10 W 2.3 - 2.7 GHz
Min Frequency(MHz)
2300
Max Frequency(MHz)
2700
Supply Voltage(V)
48
PSAT Watt(W)
10.0
Gain(dB)
34.3
Efficiency
70.2
Test Freq(GHz)
2.70
Package
4mm
PSAT(dBm)
40
Package Category
DFN Plastic

Features

  • Suitable for Linear and Saturated Applications
  • Optimized for Cellular Base Station Applications
  • Designed for Digital Predistortion Error Correction Systems
  • High Terminal Impedances for Broadband Performance
  • 48 V Operation
  • 100% RF Tested
  • RoHS* Compliant Applications

Technical Resources

Datasheet


Order from MACOM

MAGB-102327-012B0P
GaN Amplifier 48 V, 10 W 2.3 - 2.7 GHz