MADP-000907-14020P
AIGaAs Pin Diode
MACOM's MADP-000907-14020 is a solderable, flip-chip Aluminum Gallium Arsenide (AlGaAs) PIN diode. It is fabricated with MOCVD grown epitaxy using a process and design that optimizes device to device uniformity and produces extremely low parasitics. The diode exhibits an exceptionally low RC product (0.1ps) and a 2-3 nS switching speed. The chips are fully passivated with silicon nitride and have an added BCB polymer layer for scratch protection. The BCB protective coating prevents damage to the diode junction area and anode air-bridge during handling and assembly. The ultra low capacitance of the MADP-000907-14020 allows for operation at millimeter wave frequencies for RF switches and phase shifter applications. The diode is designed to be used in pulsed or CW applications, where single digit nS switching speed is required. The low capacitance of the MADP-000907-14020 makes it ideal for use in many microwave multi-throw switch assemblies, where the series capacitance of each “off” port adversely loads the input and affects VSWR.
Product Specifications
- Part Number
- MADP-000907-14020P
- Description
- AIGaAs Pin Diode
- Breakdown Voltage, Minimum(V)
- 45
- Resistance(Ohm)
- 5.20
- Total Capacitance(pF)
- 0.030
- CW Power Dissipation(W)
- 0.1
- Min Frequency(MHz)
- 100
- Max Frequency(MHz)
- 70000
Features
- Low Series Resistance
- RoHS Compliant
- Polyimide Scratch Protection
- Silicon Nitride Passivation
- Can be Driven by a Buffered TTL
- 2 Nanosecond Switching Speed
- Millimeter Wave Switching & Cutoff Frequency
- Ultra Low Capacitance
Technical Resources
Datasheet
Model Data (Sparameters)
Application Notes
- S-Parameter S2P File Format Guide
- Known Good Die Delivery Specification
- Bonding, Handling, and Mounting Procedures for Chip Diode Devices
- Design with PIN Diodes
- Establishing the Minimum Reverse Bias for a PIN Diode in a High-Power Switch
- Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches