Integrated Bias Network for 2-18 GHz Applications

The MABT-011000 is a fully monolithic broadband surface mount bias network utilizing MACOM’s patented HMIC process. This process allows the formation of silicon vias by imbedding them in low loss, low dispersion glass along with high Q spiral inductors and MIM capacitors. The close proximity of elements and the combination of silicon and glass give this HMIC device low loss and high performance with exceptional repeatability through millimeter frequencies. Large vias reduce inductance and allow part to be more easily soldered, while the gold backside metallization provides the RF and DC ground. This allows for manual or automatic die attach via electrically conductive silver epoxy or RoHS compliant solders. The MABT-011000 bias network is suitable for the DC biasing of PIN diode control circuits. It functions as an RF-DC de-coupling network as well as the DC return and contains a series DC blocking capacitor. DC currents up to 60 mA and DC voltages up to 50 V may be used.