MAAL-011251-DIE

GaN Low Noise Amplifier

The MAAL-011251-DIE is a very low noise three stage LNA designed to operate from 24 GHz to 34GHz with 1.6 dB of Noise Figure and 18 dB of gain and is offered in bare die form. It is full matched across the frequency band. The MAAL-011251-DIE amplifier has a single positive and single negative voltage bias which include a DC current regulation. This LNA is matched to 50 Ω at both input and output ports. This device is ideally suited to satellite communication and radar applications. The MAAL-011251-DIE is manufactured using MESC high performance 100 nm gate length GaN on Si HEMT power technology (D01GH). The MMIC uses gold bonding pads and backside metallization and is fully protected with Silicon Nitride passivation to obtain the highest level of reliability.

Product Specifications

Part Number
MAAL-011251-DIE
Description
GaN Low Noise Amplifier
Min Frequency(MHz)
24000
Max Frequency(MHz)
34000
Gain(dB)
18.0
Output P1dB(dBm)
5.00
OIP3(dBm)
16.0
Bias Current(mA)
50
NF(dB)
1.6
Package Category
Die

Features

  • 1.6 dB Noise Figure
  • 18 dB Gain
  • Include DC-current regulation
  • 50mA DC consumption
  • +8V Drain voltage bias
  • 50 Ohm Input and Output Matched
  • Die Size: 3.65mm x 1.26mm x 0.1mm (LxWxT)
  • RoHS* Compliant

Technical Resources

Datasheet


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MAAL-011251-DIE
GaN Low Noise Amplifier