MA4SW210B-1

HMIC PIN Diode with Bias

The MA4SW210B-1 and MA4SW310B-1 devices are SP2T and SP3T broadband switches with an integrated bias networks utilizing MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between circuit elements, this combination of silicon and glass gives HMIC™ devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while full area, gold, backside metallization allows for manual or automatic chip bonding via 80Au/20Sn solders or electrically conductive silver epoxy.

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Product Specifications

Part Number
MA4SW210B-1
Description
HMIC PIN Diode with Bias
Min Frequency(MHz)
2000
Max Frequency(MHz)
26000
Isolation(dB)
48
Insertion Loss (dB)
1.200
IIP3(dBm)
40
CW Incident Power(W)
2.0

Features

  • Broad Bandwidth Specified 2 to 18 GHz
  • RoHS Compliant
  • Polymer Protective Coating
  • Glass Encapsulate
  • Fully Monolithic Construction
  • Low Insertion Loss / High Isolation
  • Integrated Bias Network
  • Usable up to 26 GHz

Technical Resources

Datasheet

Model Data (Sparameters)

Application Notes

Order from MACOM

MA4SW210B-1
Diode,Switch,HMIC,Chip,SPDT
Order Get a Quote Get a Sample
MA4SW310B-1
Diode,Switch,HMIC,Chip
Order Get a Quote Get a Sample

Compatible Parts