GTVB222611FAV1A

High Power RF GaN on SiC HEMT, 260W, 48V, 1805-2170 MHz

The GTVB222611FA-V1A is a GaN on Silicon Carbide HEMT amplifier designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally enhanced package with earless flange.

Product Specifications

Part Number
GTVB222611FAV1A
Description
High Power RF GaN on SiC HEMT, 260W, 48V, 1805-2170 MHz
Min Frequency(MHz)
1805
Max Frequency(MHz)
2170
Gain(dB)
17.0

Features

  • GaN-on-SiC HEMT Technology
  • Pulsed CW Performance: 2170 MHz, 48 V, 10 μs pulse width, 10% Duty Cycle, Combined Outputs
  • Output Power @ P3dB = 260 W
  • Efficiency @ P3dB = 72%
  • Thermally Enhanced Package
  • RoHS* Compliant

Technical Resources

Datasheet


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GTVB222611FAV1A
High Power RF GaN on SiC HEMT, 260W, 48V, 1805-2170 MHz