GTVA220701FA

High Power RF GaN-on-SiC HEMT 70 W, 50 V, 1805 - 2170 MHz

The GTVA220701FA is a 70-watt (P3dB) GaN-on-SiC HEMT D-mode amplifier for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.

Product Specifications

Part Number
GTVA220701FA
Description
High Power RF GaN-on-SiC HEMT 70 W, 50 V, 1805 - 2170 MHz
Min Frequency (MHz)
1800
Max Frequency(MHz)
2200
P3dB Output Power(W)
45
Gain(dB)
19.0
Efficiency(%)
27
Operating Voltage(V)
50
Package Category
Earless
Form
Packaged Discrete Transistor
Technology
GaN-on-SiC

Features

  • Typical Pulsed CW performance; 1880 MHz; 48 V
  • Output power P3dB 45 W
  • Efficiency 60.7%
  • Gain 21.6 dB
  • Capable of handling 10:1 VSWR @ 48 V; 40 W (CW) output power
  • RoHS compliant
  • Input matched

Technical Resources

Datasheet


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GTVA220701FA-V1
GaN-SiC RF Transistor, 1805?2170MHz, 70W