GTRB264902FC
GaN Amplifier, 480 W, 48 V, 2620 - 2690 MHz
The GTRB264902FC-V1 is a 480 W (P4dB) GaN-on-Silicon Carbide HEMT amplifier designed for use in multi-standard cellular power amplifier applications. It features optimized operation from 2620 - 2690 MHz and a thermally-enhanced package with earless flange.
Product Specifications
- Part Number
- GTRB264902FC
- Description
- GaN Amplifier, 480 W, 48 V, 2620 - 2690 MHz
- Min Frequency (MHz)
- 2620
- Max Frequency(MHz)
- 2692
- P3dB Output Power(W)
- 480
- Gain(dB)
- 14.8
- Efficiency(%)
- 56
- Operating Voltage(V)
- 48
- Package Category
- Earless
- Technology
- GaN-on-SiC HEMT
Features
- GaN-on-SiC HEMT Technology
- Pulsed CW Performance: 2690 MHz, 48 V, 10 μs Pulse Width, 10% Duty Cycle, Combined Outputs
- Output Power @ P4dB = 480 W
- Efficiency @ P4dB = 66%
- RoHS* Compliant