GTRB097152NCV1A

Thermally Enhanced GaN Amplifier 820 W, 48 V, 758 - 960 MHz

The GTRB097152NC is a 820 W (P5dB) GaN-on-SiC HEMT Amplifier for use in multi-standard cellular applications. It features high efficiency, and a thermally-enhanced package with earless flange.

Product Specifications

Part Number
GTRB097152NCV1A
Description
Thermally Enhanced GaN Amplifier 820 W, 48 V, 758 - 960 MHz
Min Frequency(MHz)
758
Max Frequency(MHz)
960
Supply Voltage(V)
48
PSAT Watt(W)
820.0
Gain(dB)
18.2
Efficiency
61
Test Freq(GHz)
0.94
Package
TO248-4L
PSAT(dBm)
59

Features

  • GaN-on-SiC HEMT Technology
  • Pulsed CW Performance: 960 MHz, 48 V, 10 μs pulse width, 10% Duty Cycle, Combined Outputs
  • Output Power @ P5dB = 820 W
  • Efficiency @ P5dB = 68%
  • Thermally Enhanced Package
  • RoHS* Compliant

Technical Resources

Datasheet


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GTRB097152NCV1A
Thermally Enhanced GaN Amplifier 820 W, 48 V, 758 - 960 MHz