GTRA364002FC

High Power RF GaN-on-SiC HEMT 400 W; 48 V; 3400 - 3600 MHz

The GTRA364002FC is a 400-watt (PSAT) GaN-on-SiC HEMT D-mode amplifier designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.

Product Specifications

Part Number
GTRA364002FC
Description
High Power RF GaN-on-SiC HEMT 400 W; 48 V; 3400 - 3600 MHz
Min Frequency (MHz)
3300
Max Frequency(MHz)
3900
P3dB Output Power(W)
400
Gain(dB)
13.0
Efficiency(%)
40
Operating Voltage(V)
48
Package Category
Earless
Form
Packaged Discrete Transistor
Technology
GaN-on-SiC

Features

  • Asymmetrical Doherty design: Main P3dB 170 W Typ; Peak P3dB 230 W Typ
  • Typical Pulsed CW performance; 3400-3600 MHz; 48 V; combined outputs
  • Output power at P3dB 400 W
  • Efficiency 60%
  • Gain 14 dB
  • Capable of handling 10:1 VSWR @48 V; 50 W (WCDMA) output power
  • Low thermal resistance
  • Pb-free and RoHS compliant
  • Input matched

Technical Resources

Datasheet


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GTRA364002FC-V1
400W,48V,3400-3600MHz,GaN HEMT