ENGPA00240A
GaN Power Amplifier, DIE, 4 – 8 GHz
The ENGPA00240A is a C-band GaN-on-SiC HEMT two-stage 6 W, 55% power added efficiency (PAE) amplifier, that operates across 4 to 8 GHz. The design is 50 ohm matched and does not require any off-chip choke. The amplifier has a typical PAE of 55% or more across 4 to 8 GHz at 6 W output power, at 24 V bias. The amplifier has gold backside metallization and is designed for gold-tin eutectic or high thermal conductivity epoxy attachment.
Product Specifications
- Part Number
- ENGPA00240A
- Description
- GaN Power Amplifier, DIE, 4 – 8 GHz
- Min Frequency(MHz)
- 4000
- Max Frequency(MHz)
- 8000
- Gain(dB)
- 20.0
- PSAT(dBm)
- 38
- Bias Current(mA)
- 540
- PAE(%)
- 55.00
Features
- Operation Across 4 – 8 GHz
- Large Signal Gain: 20 dB
- 6 W Output; 55% PAE
- Good Input/Output Return: 9 dB
- Die Size: 5.39 x 2.15 x 0.075 mm; 0.212 x 0.085 x 0.003 inch
- RoHS* Compliant