ENGPA00239A
10-W, 65% p.a.e. GaN Power Amplifier, 2.7 – 3.5 GH
The ENGPA00239A is a S-band GaN-on-SiC HEMT two-stage 10 W, 65% power added efficiency (PAE) amplifier, that operates across 2.7 to 3.5 GHz. The design is 50 ohm matched and does require an off-chip choke (2nd stage drain bias) for best performance below 1 GHz. The amplifier has a typical PAE of 65% or more across 2.7 to 3.5 GHz at 10 W output power, at 24 V bias, when assembled with a wire choke. The amplifier has gold backside metallization and is designed for gold-tin eutectic or high thermal conductivity epoxy attachment.
Product Specifications
- Part Number
- ENGPA00239A
- Description
- 10-W, 65% p.a.e. GaN Power Amplifier, 2.7 – 3.5 GH
- Min Frequency(MHz)
- 2700
- Max Frequency(MHz)
- 3500
- Gain(dB)
- 24.0
- PSAT(dBm)
- 40
- Bias Current(mA)
- 660
- PAE(%)
- 65.00
Features
- Operation Across 2.7 – 3.5 GHz
- Large Signal Gain: 24 dB
- 10 W Output; 65% PAE
- <2:1 Output SWR, 3.0 - 3.5 GHz
- Die Size: 5.49 x 3.81 x 0.075 mm; 0.216 x 0.150 x 0.003 inch
- RoHS* Compliant