ENGLA00262A

15-dB Gain pHEMT Low Noise Amplifier, 3 – 8 GHz

 The ENGLA00262A is a wideband GaAs pHEMT one-stage 15-dB gain low noise distributed amplifier, operating across 3 to 8 GHz. The design is 50-ohm matched. The LNA has a typical noise figure of 2.1 dB across 3 to 8 GHz, at room temperature. Output third-order intercept point (OIP3) is typically above 20 dBm at 3 V, 13 mA bias. The amplifier has gold backside metallization and is designed for gold-tin eutectic or high thermal conductivity silver epoxy attachment. 

Product Specifications

Part Number
ENGLA00262A
Description
15-dB Gain pHEMT Low Noise Amplifier, 3 – 8 GHz
Min Frequency(MHz)
3000
Max Frequency(MHz)
8000
Gain(dB)
15.0
NF(dB)
2.10
OIP3(dBm)
21.0
Package Category
Die
RL In / Out (dB)
15/15

Features

  • Operation Across 3 – 8 GHz
  • Small Signal Gain: 15 dB
  • Noise Figure: 2.1 dB
  • I/O Return Loss: 15 dB
  • OIP3: 21 dBm (3 V, 13 mA)
  • Die Size: 2.65 x 1.41 x 0.1 mm; 3.74 sq. mm; 0.104 x 0.056 inch
  • RoHS* Compliant

Technical Resources

Datasheet


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ENGLA00262A
15-dB Gain pHEMT Low Noise Amplifier, 3 – 8 GHz