ENGLA00259A

12.5 dB Gain pHEMT Low Noise Amplifier, DIE, 12 – 26 GHz

The ENGLA00259A is a wideband GaAs pHEMT two-stage 12.5 dB gain low noise distributed amplifier, operating across 12 to 26 GHz. The design is 50 ohm matched. The LNA has a typical noise figure of < 3 dB across 14 to 26 GHz, at room temperature. Output third-order intercept point (OIP3) is typically above 17 dBm. The amplifier has gold backside metallization and is designed for gold-tin eutectic or high thermal conductivity silver epoxy attachment.  

Product Specifications

Part Number
ENGLA00259A
Description
12.5 dB Gain pHEMT Low Noise Amplifier, DIE, 12 – 26 GHz
Min Frequency(MHz)
12000
Max Frequency(MHz)
26000
Gain(dB)
12.5
NF(dB)
3.00
OIP3(dBm)
20.0
Package Category
Die
RL In / Out (dB)
14/11

Features

  • Operation Across 12 – 26 GHz
  • Small Signal Gain: 12.5 dB
  • Noise Figure: 3 dB
  • I/O Return Loss: 11.5 dB or Better
  • OIP3: 17 to 20 dBm
  • Die Size : 2.12 x 1.73 x 0.1 mm; 3.67 sq. mm; 0.083 x 0.068 x 0.004 inch
  • RoHS* Compliant

Technical Resources

Datasheet


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ENGLA00259A
12.5 dB Gain pHEMT Low Noise Amplifier, DIE, 12 – 26 GHz