ENGLA00182A

Wideband Low DC Power LNA DIE, 2 to 18 GHz

The ENGLA00182A is a wideband low DC power low-noise Amplifier (LNA) operating across 2 to 18 GHz with only 40 mA DC current at Vdd = 3.3 V. The amplifier offers 17.5-dB gain, 2.0-dB de- embedded noise figure, and >18-dBm output third-order intercept point (OIP3) across the band, at room temperature. The design is 50 ohm matched and includes on board bias circuitry. The MMIC has gold backside metallization and is designed to be silver epoxy or gold-tin solder attached. The RF interconnects are designed to account for wire bonds to external 50 ohm microstrip lines for optimal integrated return loss. No additional ground interconnects are required. 

Product Specifications

Part Number
ENGLA00182A
Description
Wideband Low DC Power LNA DIE, 2 to 18 GHz
Min Frequency(MHz)
2000
Max Frequency(MHz)
18000
Gain(dB)
17.5
NF(dB)
2.00
OIP3(dBm)
22.0
Output P1dB(dBm)
12.00

Features

  • LOW DC Power : 40 mW @ Vd1 =1.5 V / 132 mW @ Vd1 =3.3 V
  • Gain 15 – 17.5 dB
  • Low Noise Figure -- 2.0 dB
  • Multiple Operating Bias Conditions / Low DC Power / Low Noise
  • Good I/O return loss / 10 / 15 dB typical
  • Size : 2.72 x 1.65 x 0.10 mm / 0.107 x 0.065 x 0.004 inch

Technical Resources

Datasheet


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ENGLA00182A
Wideband Low DC Power LNA DIE, 2 to 18 GHz