ENGLA00111B
High Linearity Q-band LNA DIE, 43 - 50 GHz
The ENGLA00111B is a high linearity Low- Noise Amplifier (LNA) operating across 43 to 50 GHz. The design is 50 ohm matched and includes on-board bias circuitry. The amplifier offers 30 dB gain; 1.7 dB de-embedded noise figure; and > 23 dBm output third-order intercept point (OIP3) across the band, at room temperature. The amplifier can be operated at drain voltages 1 V to 4.5 V with a wide range of drain currents depending on low-noise or high linearity application. The MMIC has gold backside metallization and is designed to be silver epoxy or gold-tin solder attached. The RF interconnects are designed to account for wire bonds to external 50 ohm microstrip lines for optimal integrated return loss. No additional ground interconnects are required.
Product Specifications
- Part Number
- ENGLA00111B
- Description
- High Linearity Q-band LNA DIE, 43 - 50 GHz
- Min Frequency(MHz)
- 43000
- Max Frequency(MHz)
- 50000
- Gain(dB)
- 28.0
- NF(dB)
- 1.70
- OIP3(dBm)
- 23.0
- Output P1dB(dBm)
- 18.00
Features
- High Gain: 27– 30 dB
- High Linearity: 23 dBm
- Low Noise Figure: 1.7 dB
- Good I/O Return Loss: 10 / 12 dB typical
- Multiple Operating Bias Conditions : Low Noise; High Linearity
- Wide Vdd Operating Range: 1.0 - 4.5 V
- On-chip Input ESD Protection
- Small size: 2.72 x 1.5 x 0.10 mm; 0.107 x 0.060 x 0.004 inch
- RoHS* Compliant