ENGDA00160
Wideband Distributed Amplifier, DIE, 1 - 19 GHz
The ENGDA00160 is a wideband, linear GaAs MMIC distributed amplifier die which operates from 1 to 19 GHz. The design is 50 ohm matched and does not require external bias coil inductors. The amplifier delivers 11 dB gain with >1 dB positive gain slope across the band over a wide drain voltage range (3 V to 10 V). Noise figure is <3.5 dB across 4 – 18 GHz for bias voltages between 4 and 8 V. The amplifier has gold backside metallization and is designed to be silver epoxy attached. The RF interconnects are designed to account for wire bonds and external microstrip flares for optimal integrated return loss. No additional ground interconnects are required.
Product Specifications
- Part Number
- ENGDA00160
- Description
- Wideband Distributed Amplifier, DIE, 1 - 19 GHz
- Min Frequency(MHz)
- 1000
- Max Frequency(MHz)
- 19000
- Gain(dB)
- 11.0
- Output P1dB(dBm)
- 10.00
- OIP3(dBm)
- 18.0
- Bias Current(mA)
- 70
- NF(dB)
- 3.5
Features
- Wideband Performance
- High linearity: 7 dBm IIP3 at 6 V; 9 dBm IIP3 at 8 V
- Noise Figure: <3.5, 4 – 18 GHz
- Positive Gain Slope: 11 dB
- 3 V to 10 V Bias Operation
- Input/Output Return Loss: 14 dB
- Die Size : 2.93 x 2.00 x 0.1 mm; 0.115 x 0.079 x 0.004 inch
- RoHS* Compliant