CMPA5259025

40 W; 5200 - 5900 MHz; 28 V; GaN MMIC for Radar Power Amplifiers

The CMPA5259025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency; high gain; and wide bandwidth capabilities; which makes CMPA5259025F ideal for 5.2 - 5.9 GHz Radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.

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Product Specifications

Part Number
CMPA5259025
Description
40 W; 5200 - 5900 MHz; 28 V; GaN MMIC for Radar Power Amplifiers
Min Frequency(MHz)
5200
Max Frequency(MHz)
5900
Gain(dB)
25.0

Features

  • 30 dB Small Signal Gain
  • 50% Efficiency at PSAT
  • Operation up to 28 V
  • High Breakdown Voltage

Technical Resources

Datasheet

Model Data (Sparameters)

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CMPA5259025S
MMIC GaN HEMT, G28V4-1, 25W, 5.2-5.9 GHz
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