CGHV1420KF

GaN on SiC Amplifier, 2500 W, 65 V 0.96 - 1.4 GHz

CGHV1420KF is a 2500W package, partially matched amplifier utilizing high performance, GaN-on-SiC production process. The CGHV1420KF  operates up to 1.4 GHz and supports both defense  and commercial-related avionics applications. The CGHV1420KF typically achieves 2500 W of saturated output power with 17 dB of large signal  gain and 60% drain efficiency via a 1030 MHz reference design. Packaged in a thermally-enhanced, flange package, the CGHV1420KF provides superior performance allowing customers to improve SWaP-C benchmarks  in their next-generation systems. 

Product Specifications

Part Number
CGHV1420KF
Description
GaN on SiC Amplifier, 2500 W, 65 V 0.96 - 1.4 GHz
Min Frequency(MHz)
960
Max Frequency(MHz)
1400
Supply Voltage(V)
65
PSAT Watt(W)
2500.0
Gain(dB)
18.0
Efficiency
60

Features

  • Saturated Power: 2500 W
  • Drain Efficiency: 60%
  • Small Signal Gain: 18 dB
  • Lead-Free Air Cavity Ceramic Package
  • RoHS* Compliant

Technical Resources

Datasheet


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CGHV1420KF
GaN on SiC Amplifier, 2500 W, 65 V 0.96 - 1.4 GHz