CGH09120F
120-W; UHF – 2.5-GHz; GaN HEMT for WCDMA; LTE; MC-GSM
The CGH09120F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH09120F ideal for MC-GSM; WCDMA and LTE amplifier applications. The transistor is supplied in a ceramic/metal flange package.
Product Specifications
- Part Number
- CGH09120F
- Description
- 120-W; UHF – 2.5-GHz; GaN HEMT for WCDMA; LTE; MC-GSM
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 2500
- Gain(dB)
- 21.0
- Package Category
- Ceramic
Features
- UHF – 2.5 GHz Operation
- 21 dB Gain
- -38 dBc ACLR at 20 W PAVE
- 35 % Efficiency at 20 W PAVE
- High Degree of DPD Correction Can be Applied