CG2H40120

120 W; RF Power GaN HEMT

The CG2H40120 is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CG2H40120; operating from a 28-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities; making the CG2H40120 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package.

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Product Specifications

Part Number
CG2H40120
Description
120 W; RF Power GaN HEMT
Min Frequency(MHz)
0
Max Frequency(MHz)
2500
Gain(dB)
20.0

Features

  • 20 dB Small Signal Gain at 1.0 GHz
  • 15 dB Small Signal Gain at 2.0 GHz
  • 130 W Typical PSAT
  • 70% Efficiency at PSAT
  • 28 V Operation

Technical Resources

Datasheet

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CG2H40120F
120W, G28V4, 4.0GHz, GaN HEMT, FLANGE
Order Get a Quote Get a Sample
CG2H40120F-AMP
AMPLIFIER ASSY, 4.0GHz, INCLUDES CG2H401
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CG2H40120P
120W, G28V4, 4.0GHz, GaN HEMT, PILL
Order Get a Quote Get a Sample