2N6439
Bipolar The RF Line NPN Silicon Power Transistor 60W, 225 to 400MHz, 28V
Designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range.
Product Specifications
- Part Number
- 2N6439
- Description
- Bipolar The RF Line NPN Silicon Power Transistor 60W, 225 to 400MHz, 28V
- Min Frequency(MHz)
- 225
- Max Frequency(MHz)
- 400
- Bias Voltage(V)
- 28.0
- Pout(W)
- 60.00
- Gain(dB)
- 7.80
- Efficiency(%)
- 55
- Type
- Bipolar
- Package
- Flange Ceramic Pkg
- Package Category
- Ceramic Flange Mount
Features
- Guaranteed Performance in 225 to 400 MHz broadband amplifier @ 28 Vdc: Output Power = 60 W over 225 to 400 MHz band, Minimum Gain = 7.8 dB @ 400 MHz
- Gold Metallization System for High Reliability Application
- 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWRTesdtedc
- Built–In Matching Network for Broadband Operation using Double Match Technique
Applications
- Aerospace and Defense
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- Transistor Mounting and Soldering
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)