Communications Infrastructure

MACOM offers an extensive portfolio of GaN-on-SiC and LDMOS power transistors for use in the design of telecommunication systems supporting all global standards and frequency bands, from 450 MHz to 5 GHz and power levels to 1000 W. Key features include high-power Doherty designs, ease of use with DPD systems, open-cavity and plastic package options, and reference designs. As 5G expands and matures, MACOM continues to expand and explore the advantages inherent in wide bandgap GaN-on-SiC for designers and developers seeking better performance everywhere.

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MAPL-100405-060C
New
LDMOS Transistor, 75 W, 50 V, DC - 1 GHz010007423.77050Air Cavity
GTRB264902FC
New
GaN Amplifier, 480 W, 48 V, 2620 - 2690 MHz2620269248014.85648Earless
WGC20630-V1A
Thermally Enhanced GaN Amplifier 630 W, 48 V, 1930 - 2020 MHz1930202063016.17448Plastic
WGC22630
Thermally Enhanced GaN Amplifier 630 W, 48 V, 2110 - 2200 MHz2110220063016.56848Plastic
GTRB266702FCV1A
High Power RF GaN on SiC HEMT, 610W, 48V, 2620-2690 MHz26202690414.26648Earless
GTVB222611FAV1A
High Power RF GaN on SiC HEMT, 260W, 48V, 1805-2170 MHz1805217026017.07248Earless
CGH09120F
120-W; UHF – 2.5-GHz; GaN HEMT for WCDMA; LTE; MC-GSM0250012021.03528CeramicPackaged Discrete Transistor
GTRA184602FC-V1
High Power RF GaN-on-SiC HEMT, 460 W, 48 V, 1805 - 1880 MHz1805188046015.56048EarlessPackaged Discrete Transistor
GTRA214602FC
High Power RF GaN-on-SiC HEMT, 490 W, 48 V, 2110 - 2170 MHz2110217049014.45948EarlessPackaged Discrete Transistor
GTRA262802FC
High Power RF GaN-on-SiC HEMT 250 W; 48 V; 2490 - 2690 MHz2490269025014.05448EarlessPackaged Discrete Transistor
GTRA263902FC-V2
High Power RF GaN-on-SiC HEMT 370 W; 48 V; 2495 - 2690 MHz2495269037013.85448EarlessPackaged Discrete Transistor
GTRA362002FC-V1
High Power RF GaN-on-SiC HEMT 200 W; 48 V; 3400 - 3600 MHz3300390020013.54248EarlessPackaged Discrete Transistor
GTRA362802FC-V1
High Power RF GaN-on-SiC HEMT 280 W, 48 V, 3400 - 3600 MHz3300390028013.54648EarlessPackaged Discrete Transistor
GTRA364002FC
High Power RF GaN-on-SiC HEMT 400 W; 48 V; 3400 - 3600 MHz3300390040013.04048EarlessPackaged Discrete Transistor
GTRA374902FC-V1
High Power RF GaN-on-SiC HEMT 450 W, 48 V, 3600 - 3700 MHz3600370045012.03848EarlessPackaged Discrete Transistor
GTRA384802FC-V1
High Power RF GaN-on-SiC HEMT 400 W, 48 V, 3600 - 3800 MHz3600380040013.04248EarlessPackaged Discrete Transistor
GTRA412852FC-V1
High Power RF GaN-on-SiC HEMT 235 W, 48 V, 3700 - 4100 MHz3700410023511.54548EarlessPackaged Discrete Transistor
GTRB097152FC
High Power RF GaN-on-SiC HEMT 900 W, 48 V, 758 - 960 MHz75896845018.05948EarlessPackaged Discrete Transistor
GTRB184402FC
High Power RF GaN-on-SiC HEMT 440 W, 48 V, 1805 - 1880 MHz1805188044016.75648EarlessPackaged Discrete Transistor
GTRB186002FC-V1
High Power RF GaN-on-SiC HEMT 500 W, 48 V, 1805 - 1880 MHz1805188050015.75448EarlessPackaged Discrete Transistor
GTRB204402FC
High Power RF GaN-on-SiC HEMT 350 W, 48 V, 1930 - 2020 MHz1930202035016.35848EarlessPackaged Discrete Transistor
GTRB206002FC
High Power RF GaN-on-SiC HEMT 500 W, 48 V, 1930 - 2020 MHz1930202050014.85348EarlessPackaged Discrete Transistor
GTRB224402FC-V1
High Power RF GaN-on-SiC HEMT 400 W, 48 V, 2110 - 2200 MHz2110220040015.55548EarlessPackaged Discrete Transistor
GTRB226002FC-V1
High Power RF GaN-on-SiC HEMT 450 W, 48 V, 2110 - 2200 MHz2110220045015.06048EarlessPackaged Discrete Transistor
GTRB246608FC-V1
High Power RF GaN-on-SiC HEMT 500 W, 48 V, 2300 - 2400 MHz2300240050015.75448EarlessPackaged Discrete Transistor
GTRB264318FC-V1
High Power RF GaN-on-SiC HEMT 400 W, 48 V, 2500 - 2700 MHz2500270040014.05048EarlessPackaged Discrete Transistor
GTRB266502FC
High Power RF GaN-on-SiC HEMT 630 W, 48 V, 2620 - 2690 MHz2620269063014.04948EarlessPackaged Discrete Transistor
GTRB266908FC-V1
High Power RF GaN-on-SiC HEMT 500 W, 48 V, 2515 - 2675 MHz2515267550015.05248EarlessPackaged Discrete Transistor
GTRB267008FC-V1
High Power RF GaN-on-SiC HEMT 620 W, 48 V, 2496 - 2690 MHz2496269062015.05248EarlessPackaged Discrete Transistor
GTRB384608FC
High Power RF GaN-on-SiC HEMT 400 W, 48 V, 3300 - 3800 MHz3300380040012.54355EarlessPackaged Discrete Transistor
GTRB424908FC
High Power RF GaN-on-SiC HEMT 450 W, 48 V, 3700 - 3980 MHz3700398045012.04248EarlessPackaged Discrete Transistor
GTVA212701FA-V2
High Power RF GaN-on-SiC HEMT 270 W, 48 V, 2110 - 2200 MHz1800220030019.03848EarlessPackaged Discrete Transistor
GTVA220701FA
High Power RF GaN-on-SiC HEMT 70 W, 50 V, 1805 - 2170 MHz180022004519.02750EarlessPackaged Discrete Transistor
GTVA261701FA-V1
High Power RF GaN-on-SiC HEMT 170 W, 50 V, 2.62 - 2.69 GHz2300270017017.04350EarlessPackaged Discrete Transistor
GTVA261802FC-V1
High Power RF GaN-on-SiC HEMT 170 W, 48 V, 2620 - 2690 MHz2620269017016.84348EarlessPackaged Discrete Transistor
GTVA262701FA-V2
High Power RF GaN-on-SiC HEMT 270 W, 48 V, 2620 - 2690 MHz2620269027017.04248EarlessPackaged Discrete Transistor
GTVA262711FA
High Power RF GaN-on-SiC HEMT 300 W, 48 V, 2620 - 2690 MHz2620269030018.03948EarlessPackaged Discrete Transistor
GTVA263202FC-V1
High Power RF GaN-on-SiC HEMT 340 W, 48 V, 2620 - 2690 MHz2300270034017.04048EarlessPackaged Discrete Transistor
PTGA090304MD-V2
Wideband LDMOS Two-stage Integrated Power Amplifier 2 X 15 W; 48 V; 575 - 960 MHz50010003032.01948Surface MountPackaged Discrete Transistor
PTMC210404MD-V2
Wideband LDMOS Two-stage Integrated Power Amplifier 2 x 20 W; 28 V; 1805 - 2200 MHz180022003730.01928Surface MountPackaged Discrete Transistor
PTNC210604MD-V2
Wideband LDMOS Two-stage Integrated Power Amplifier 20 W + 40 W; 28 V; 1805 - 2200 MHz180022006327.03728Surface MountPackaged Discrete Transistor
PTRA082808NF-V1
High Power RF LDMOS FET 280 W; 48 V; 790 - 820 MHz79082025015.54548PlasticPackaged Discrete Transistor
PTRA083818NF-V1
High Power RF LDMOS FET 275 W; 48 V; 733 - 805 MHz500100027518.05648Surface MountPackaged Discrete Transistor
PTRA084808NF-V1
High Power RF LDMOS FET 550 W; 48 V; 734 - 821 MHz500100055018.05548PlasticPackaged Discrete Transistor
PTRA084858NF-V1
High Power RF LDMOS FET; 615 W; 48 V; 730 - 960 MHz73096061519.05048EarlessPackaged Discrete Transistor
PTRA087008NB-V1
High Power RF LDMOS FET 650 W; 48 V; 755 - 805 MHz500100038018.55248PlasticPackaged Discrete Transistor
PTRA093818NF-V1
High Power RF LDMOS FET 415 W; 48 V; 925 - 960 MHz500100037017.05248PlasticPackaged Discrete Transistor
PTRA094808NF-V1
High Power RF LDMOS FET 480 W; 48 V; 859 - 960 MHz500100042017.55348PlasticPackaged Discrete Transistor
PTRA095908NB-V1
High Power RF LDMOS FET; 520 W; 48 V; 925 - 960 MHz92096046017.55248Surface MountPackaged Discrete Transistor
PTRA097008NB-V1
High Power RF LDMOS FET 630 W; 48 V; 920 - 960 MHz500100060019.04948PlasticPackaged Discrete Transistor
PTRA097058NB-V1
High Power RF LDMOS FET; 800 W; 48 V; 730 - 960 MHz73096080018.04848PlasticPackaged Discrete Transistor
PTVA082407NF
High Power RF LDMOS FET 240 W; 48 V; 746 - 821 MHz500100025022.53648PlasticPackaged Discrete Transistor
PTVA084007NF
High Power RF LDMOS FET 370 W; 48 V; 755 - 805 MHz500100037023.53948PlasticPackaged Discrete Transistor
PTVA092407NF-V2
High Power RF LDMOS FET 240 W; 48 V; 869 - 960 MHz500100028722.54048PlasticPackaged Discrete Transistor
PXAD184218FV-V1
High Power RF LDMOS FET 420 W; 28 V; 1805 - 1880 MHz1805188042016.05228EarlessPackaged Discrete Transistor
PXAD214218FV-V1
High Power RF LDMOS FET 430 W; 28 V; 2110 - 2170 MHz1800230043616.04928EarlessPackaged Discrete Transistor
PXAE183708NB
High Power RF LDMOS FET 320 W; 28 V; 1805 - 1880 MHz1800220031516.05128PlasticPackaged Discrete Transistor
PXAE213708NB
High Power RF LDMOS FET 400 W; 28 V; 2110 - 2200 MHz2110220029016.05228PlasticPackaged Discrete Transistor
PXAE261908NF-V1
High Power RF LDMOS FET 240 W,28 V, 2515 - 2675 MHz2515267524013.54728PlasticPackaged Discrete Transistor
PXAE263708NB-V1
High Power RF LDMOS FET 400 W (P3dB); 28 V; 2620 - 2690 MHz2620269040013.54728PlasticPackaged Discrete Transistor
PXFC191507FC-V1
High Power RF LDMOS FET 150 W; 28 V; 1805 - 1990 MHz1805199014020.53128EarlessPackaged Discrete Transistor
WS1A2639-V1-R3K
38.5 dBm GaN on SiC Power Amplifier Module; 2496-2690 MHz249626905016.55748Surface MountPackaged Discrete Transistor
WS1A3640
39.5 dBm GaN-on-SiC Power Amplifier Module; 3300-3800 MHz330038006013.55248Surface MountPackaged Discrete Transistor
WS1A3940-V1-R3K
39.5 dBm GaN-on-SiC Power Amplifier Module; 3700-3980 MHz370039806013.05248Surface MountPackaged Discrete Transistor
WSGPA01-V1-R3K
10 W; 5 GHz; GaN on SiC General Purpose Power Amplifier050001018.01948Surface MountPackaged Discrete Transistor
PTVA12025
High Power RF LDMOS FET 25 W; 500 - 1400 MHz500140018.05450Bolt Down, Surface MountPackaged Discrete Transistor