GTRA384802FC-V1

High Power RF GaN-on-SiC HEMT 400 W, 48 V, 3600 - 3800 MHz

The GTRA384802FC is a 400-watt (P3dB) GaN-on-SiC HEMT D-mode amplifier  for use in multi-standard cellular power amplifier applications. It features input and output matching, high efficiency, and a thermally-enhanced package with earless flange.

Product Specifications

Part Number
GTRA384802FC-V1
Description
High Power RF GaN-on-SiC HEMT 400 W, 48 V, 3600 - 3800 MHz
Min Frequency (MHz)
3600
Max Frequency(MHz)
3800
P3dB Output Power(W)
400
Gain(dB)
13.0
Efficiency(%)
42
Operating Voltage(V)
48
Package Category
Earless
Form
Packaged Discrete Transistor
Technology
GaN-on-SiC

Features

  • Asymmetrical Doherty design: Main P3dB 200 W Typ, Peak P3dB 280 W Typ
  • Typical Pulsed CW performance; 3800 MHz, 48 V, combined outputs, 10% duty cycle
  • Output power 400 W
  • Efficiency 62%
  • Gain 13 dB
  • Capable of handling 10:1 VSWR @48 V, 63 W (WCDMA) output power
  • Pb-free and RoHS compliant
  • Input matched

Technical Resources

Datasheet


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GTRA384802FC-V1
3600-3800 MHz 400W 48V GaN SiC HEMT