WGC22630
Thermally Enhanced GaN Amplifier 630 W, 48 V, 2110 - 2200 MHz
The WGC22630 is a 630 W (P4dB) GaN on Silicon Carbide HEMT amplifier designed for use in multistandard cellular power amplifier applications. It features optimized operation from 2110 - 2200 MHz and a thermally-enhanced over-molded plastic package.
Product Specifications
- Part Number
- WGC22630
- Description
- Thermally Enhanced GaN Amplifier 630 W, 48 V, 2110 - 2200 MHz
- Max Frequency(MHz)
- 2200
- Gain(dB)
- 16.5
- Package Category
- Plastic
Features
- GaN on SiC HEMT Technology
- Pulsed CW Performance: 2155 MHz, 48 V, 40 µs Pulse Width, 10% Duty Cycle, Combined Outputs
- Output Power @ P4dB = 630 W
- Efficiency @ P4dB = 68%
- RoHS* Compliant