C-Band

MACOM’s GaN-on-SiC products are suited for pulsed and CW C-band applications. With a variety of power levels, high gain/stage and high power-added efficiency, MACOM’s products support continuous improvements in SWAP-C benchmarks. Thereby supporting next generation systems in areas such as surveillance and weather radar, as well as satellite communications. 

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350 W; 5200 to 5900 MHz; 50 ohm Input/Output-Matched; GaN HEMT52005900350115550Flange, Pill
10 W RF Power GaN HEMT06000106528Packaged Discrete TransistorFlange, Pill
25 W RF Power GaN HEMT06000256228Packaged Discrete TransistorFlange, Pill
35 W RF Power GaN HEMT0600035146428Packaged Discrete TransistorFlange, Pill
15 W; 8.0 GHz ; GaN HEMT Die08000157028Discrete Bare DieDie
30 W; 8.0 GHz; GaN HEMT Die0800030176528Discrete Bare DieDie
45 W, 8.0 GHz, GaN HEMT Die0800045156528Discrete Bare DieDie
60 W; 8.0 GHz; GaN HEMT Die08000607028Discrete Bare DieDie
120 W; DC - 8000 MHz; 28 V; GaN HEMT Die08000120126528Discrete Bare DieDie
6 W RF Power GaN HEMT060006116528Packaged Discrete TransistorPill, Surface Mount
10 W RF Power GaN HEMT0600010146528Packaged Discrete TransistorFlange, Pill
25 W RF Power GaN HEMT0600025136228Packaged Discrete TransistorFlange, Pill
35 W RF Power GaN HEMT0600035136028Packaged Discrete TransistorFlange
10 W; C - band; Unmatched; GaN HEMT0600010126028Packaged Discrete TransistorFlange, Pill
30 W; 5500 - 5800 MHz; 28 V; GaN HEMT for WiMAX0600030102528Packaged Discrete TransistorFlange, Pill
6 W; DC - 15.0 GHz; 40 V; GaN HEMT015000675240Packaged Discrete TransistorSurface Mount
25 W; DC - 15 GHz; 40 V; GaN HEMT01500025115140Packaged Discrete TransistorSurface Mount
6 W; 18.0 GHz; GaN HEMT Die0180006176040Discrete Bare DieDie
25 W; 18.0 GHz; GaN HEMT Die01800025176040Discrete Bare DieDie
70 W; 18.0 GHz; GaN HEMT Die01800070176040Discrete Bare DieDie
15 W; DC - 6.0 GHz; 50 V; GaN HEMT0600015213250Packaged Discrete TransistorSurface Mount
30 W; DC - 6.0 GHz; GaN HEMT0600030213250Packaged Discrete TransistorSurface Mount
30 W; DC - 6 GHz; 50 V; GaN HEMT0600030167050Packaged Discrete TransistorFlange, Pill
70 W; 4500 to 5900 MHz; internally matched GaN HEMT for C-Band Radar Systems4500590070125050Packaged Discrete TransistorFlange, Pill
40 W; 6.0 GHz; GaN HEMT Die06000406250Discrete Bare DieDie
75 W; 6.0 GHz; GaN HEMT Die060007576550Discrete Bare DieDie
170 W; 6.0 GHz; 50 V GaN HEMT Die06000170176550Discrete Bare DieDie
50 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched GaN HEMT7900960050105540Packaged Discrete TransistorFlange
100 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched; GaN HEMT Power Amplifier79009600100104540Packaged Discrete TransistorFlange
2 W; 20 MHz - 6000 MHz; GaN MMIC Power Amplifier060002172328Packaged MMICFlange
25 W; DC - 6.0 GHz; GaN MMIC Power Amplifier0600025183350Packaged MMICFlange, Die
35 W; 2.0 - 6.0 GHz; 28V; GaN MMIC Power Amplifier2000600035303528Packaged MMICFlange, Die
25 W; 2.5 - 6.0 GHz; GaN MMIC Power Amplifier2500600025243128Packaged MMIC, MMIC Bare DieFlange, Die
40 W; 5200 - 5900 MHz; 28 V; GaN MMIC for Radar Power Amplifiers5200590040255428Packaged Discrete TransistorPlastic
50 W; 5200 - 5900 MHz; 28 V; GaN MMIC for Radar Power Amplifiers5000590060235028Packaged MMICDie
High power C-band MMIC for pulsed radar operation.5200590080224440Packaged MMICSurface Mount
40 W; 6.0 - 12.0 GHz; GaN MMIC; Power Amplifier60001200040253228Packaged MMICFlange, Die