C-Band
MACOM’s GaN-on-SiC products are suited for pulsed and CW C-band applications. With a variety of power levels, high gain/stage and high power-added efficiency, MACOM’s products support continuous improvements in SWAP-C benchmarks. Thereby supporting next generation systems in areas such as surveillance and weather radar, as well as satellite communications.
37 Items
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350 W; 5200 to 5900 MHz; 50 ohm Input/Output-Matched; GaN HEMT | 5200 | 5900 | 350 | 11 | 55 | 50 | Flange, Pill | |||
10 W RF Power GaN HEMT | 0 | 6000 | 10 | 65 | 28 | Packaged Discrete Transistor | Flange, Pill | |||
25 W RF Power GaN HEMT | 0 | 6000 | 25 | 62 | 28 | Packaged Discrete Transistor | Flange, Pill | |||
35 W RF Power GaN HEMT | 0 | 6000 | 35 | 14 | 64 | 28 | Packaged Discrete Transistor | Flange, Pill | ||
15 W; 8.0 GHz ; GaN HEMT Die | 0 | 8000 | 15 | 70 | 28 | Discrete Bare Die | Die | |||
30 W; 8.0 GHz; GaN HEMT Die | 0 | 8000 | 30 | 17 | 65 | 28 | Discrete Bare Die | Die | ||
45 W, 8.0 GHz, GaN HEMT Die | 0 | 8000 | 45 | 15 | 65 | 28 | Discrete Bare Die | Die | ||
60 W; 8.0 GHz; GaN HEMT Die | 0 | 8000 | 60 | 70 | 28 | Discrete Bare Die | Die | |||
120 W; DC - 8000 MHz; 28 V; GaN HEMT Die | 0 | 8000 | 120 | 12 | 65 | 28 | Discrete Bare Die | Die | ||
6 W RF Power GaN HEMT | 0 | 6000 | 6 | 11 | 65 | 28 | Packaged Discrete Transistor | Pill, Surface Mount | ||
10 W RF Power GaN HEMT | 0 | 6000 | 10 | 14 | 65 | 28 | Packaged Discrete Transistor | Flange, Pill | ||
25 W RF Power GaN HEMT | 0 | 6000 | 25 | 13 | 62 | 28 | Packaged Discrete Transistor | Flange, Pill | ||
35 W RF Power GaN HEMT | 0 | 6000 | 35 | 13 | 60 | 28 | Packaged Discrete Transistor | Flange | ||
10 W; C - band; Unmatched; GaN HEMT | 0 | 6000 | 10 | 12 | 60 | 28 | Packaged Discrete Transistor | Flange, Pill | ||
30 W; 5500 - 5800 MHz; 28 V; GaN HEMT for WiMAX | 0 | 6000 | 30 | 10 | 25 | 28 | Packaged Discrete Transistor | Flange, Pill | ||
6 W; DC - 15.0 GHz; 40 V; GaN HEMT | 0 | 15000 | 6 | 7 | 52 | 40 | Packaged Discrete Transistor | Surface Mount | ||
25 W; DC - 15 GHz; 40 V; GaN HEMT | 0 | 15000 | 25 | 11 | 51 | 40 | Packaged Discrete Transistor | Surface Mount | ||
6 W; 18.0 GHz; GaN HEMT Die | 0 | 18000 | 6 | 17 | 60 | 40 | Discrete Bare Die | Die | ||
25 W; 18.0 GHz; GaN HEMT Die | 0 | 18000 | 25 | 17 | 60 | 40 | Discrete Bare Die | Die | ||
70 W; 18.0 GHz; GaN HEMT Die | 0 | 18000 | 70 | 17 | 60 | 40 | Discrete Bare Die | Die | ||
15 W; DC - 6.0 GHz; 50 V; GaN HEMT | 0 | 6000 | 15 | 21 | 32 | 50 | Packaged Discrete Transistor | Surface Mount | ||
30 W; DC - 6.0 GHz; GaN HEMT | 0 | 6000 | 30 | 21 | 32 | 50 | Packaged Discrete Transistor | Surface Mount | ||
30 W; DC - 6 GHz; 50 V; GaN HEMT | 0 | 6000 | 30 | 16 | 70 | 50 | Packaged Discrete Transistor | Flange, Pill | ||
70 W; 4500 to 5900 MHz; internally matched GaN HEMT for C-Band Radar Systems | 4500 | 5900 | 70 | 12 | 50 | 50 | Packaged Discrete Transistor | Flange, Pill | ||
40 W; 6.0 GHz; GaN HEMT Die | 0 | 6000 | 40 | 62 | 50 | Discrete Bare Die | Die | |||
75 W; 6.0 GHz; GaN HEMT Die | 0 | 6000 | 75 | 7 | 65 | 50 | Discrete Bare Die | Die | ||
170 W; 6.0 GHz; 50 V GaN HEMT Die | 0 | 6000 | 170 | 17 | 65 | 50 | Discrete Bare Die | Die | ||
50 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched GaN HEMT | 7900 | 9600 | 50 | 10 | 55 | 40 | Packaged Discrete Transistor | Flange | ||
100 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched; GaN HEMT Power Amplifier | 7900 | 9600 | 100 | 10 | 45 | 40 | Packaged Discrete Transistor | Flange | ||
2 W; 20 MHz - 6000 MHz; GaN MMIC Power Amplifier | 0 | 6000 | 2 | 17 | 23 | 28 | Packaged MMIC | Flange | ||
25 W; DC - 6.0 GHz; GaN MMIC Power Amplifier | 0 | 6000 | 25 | 18 | 33 | 50 | Packaged MMIC | Flange, Die | ||
35 W; 2.0 - 6.0 GHz; 28V; GaN MMIC Power Amplifier | 2000 | 6000 | 35 | 30 | 35 | 28 | Packaged MMIC | Flange, Die | ||
25 W; 2.5 - 6.0 GHz; GaN MMIC Power Amplifier | 2500 | 6000 | 25 | 24 | 31 | 28 | Packaged MMIC, MMIC Bare Die | Flange, Die | ||
40 W; 5200 - 5900 MHz; 28 V; GaN MMIC for Radar Power Amplifiers | 5200 | 5900 | 40 | 25 | 54 | 28 | Packaged Discrete Transistor | Plastic | ||
50 W; 5200 - 5900 MHz; 28 V; GaN MMIC for Radar Power Amplifiers | 5000 | 5900 | 60 | 23 | 50 | 28 | Packaged MMIC | Die | ||
High power C-band MMIC for pulsed radar operation. | 5200 | 5900 | 80 | 22 | 44 | 40 | Packaged MMIC | Surface Mount | ||
40 W; 6.0 - 12.0 GHz; GaN MMIC; Power Amplifier | 6000 | 12000 | 40 | 25 | 32 | 28 | Packaged MMIC | Flange, Die |