WSDC2640-V1
Thermally Enhanced GaN-on-SiC Amplifier, 70 W, 48 V, 2.496 - 2.690 GHz
The WSDC2640 GaN-on-SiC HEMT Amplifier is designed for base station applications and optimized for 2.496 - 2.690 GHz modulated signal operation. This device supports pulsed and linear operation with peak output power levels to 70 W (48.5 dBm) in a 6.5 x 7.0 mm DFN package.
Product Specifications
- Part Number
- WSDC2640-V1
- Description
- Thermally Enhanced GaN-on-SiC Amplifier, 70 W, 48 V, 2.496 - 2.690 GHz
- Min Frequency(MHz)
- 2496
- Max Frequency(MHz)
- 2690
- Supply Voltage(V)
- 48
- PSAT Watt(W)
- 70.0
- Gain(dB)
- 17.0
- Efficiency
- 57
- Test Freq(GHz)
- 2.60
- Package
- 7.0 x 6.5 mm DFN
- PSAT(dBm)
- 48
Features
- Optimized for Cellular Base Station Applications
- Designed for Digital Predistortion Error Correction Systems
- High Terminal Impedances for Broadband Performance
- 48 V Capable Operation
- 100% RF Tested
- RoHS* Compliant