New Products Listing
Below is the list of products released in the last year to MACOM’s already extensive portfolio.
| 10 W, Wideband GaN Distributed Amplifier, DIE, 2 to 18 GHz | |
| GaN High Power Amplifier, 25 W 27 - 31 GHz | |
| GaN High Power Amplifier, 40 W 8.5 - 10.5 GHz | |
| 2 – 18 GHz 3-stage wideband feedback power amplifier | |
| 7.5W, Power Amplifier 37 - 43 GHz | |
| 6 - 18 GHz 5 BIT TRUE TIME DELAY | |
| GaN Front End Module, 5 W 8.5 - 10.5 GHz | |
| Transmit / Receive Switch 2 - 18 GHz | |
| 1:1 Tx Line Balun with Tertiary Winding 30 - 1800 MHz | |
| GaN Amplifier 50 V, 700 W 5.2 - 5.9 GHz | |
| GaN Amplifier, 40 V, 60 W 7.7– 8.5 GHz | |
| GaN Amplifier Pallet 50 V, 1kW | |
| SPDT AlGaAs PIN Diode Switch | |
| Low Noise Amplifier 27.0 - 31.5 GHz | |
| Low Noise Amplifier 17.0 - 21.5 GHz | |
| GaN Amplifier 65 V, 500 W 3.5 - 3.7 GHz | |
| SPDT Reflective Switch 100 MHz - 67 GHz | |
| SPDT Absorptive Switch 100 MHz - 67 GHz | |
| GaN High Power Amplifier, 60 W 13.75 - 15.5 GHz | |
| GaN High Power Amplifier, 50 W 5 - 6 GHz | |
| GaN on SiC Amplifier, 2500 W, 65 V 0.96 - 1.4 GHz | |
| Wideband Power Divider, Packaged 0.8 - 4 GHz | |
| RF Low Noise Amplifier 1 - 18 GHz | |
| Silicon Hyperabrupt Tuning Varactor Diodes | |
| Silicon Hyperabrupt Tuning Varactor Diodes | |
| Varactor Diode, SOD-882 | |
| High Power RF GaN Amplifier 60 W, 50 V, 4900 - 5000 MHz | |
| GaN Amplifier 50 V, 525 W 2.8 - 3.5 GHz | |
| GaN Amplifier 65 V, 500 W 2.75 - 3.75 GHz | |
| GaN on SiC Transistor, 300 W, 50 V DC - 2.7 GHz | |
| High Power RF GaN Amplifier 30 W, 48 V, DC - 6000 MHz | |
| 3T Low Noise Low Input Impedance Pre-Amplifier Module | |
| GaN Amplifier 65 V, 700 W 2.7 - 3.1 GHz | |
| Dual 56 GBaud EML Driver with Equalizer | |
| Quad Linear 227 Gbps PAM4 VCSEL Driver | |
| 75 mW Edge Emitting DFB Laser Chip | |
| Backside-illuminated PIN Photodiode with Integrated Lens | |
| GaN on SiC Transistor, 300 W, 65 V DC - 2 GHz | |
| GaN Amplifier 65 V, 700 W 3.1 - 3.5 GHz | |
| Fixed Attenuator, 10 dB DC - 18 GHz | |
| 27 – 31 GHz, 6W GaN PA | |
| GaN on SiC Transistor, 40 W, 65 V DC - 6 GHz | |
| 1.5T Low Noise, Low Impedance, Pre-Amplifier Module | |
| GaN on SiC Amplifier, 25 W, 50 V DC - 1.4 GHz | |
| GaN on SiC Transistor, 1200 W, 65 V 1.2 - 1.4 GHz | |
| Ka Band, Low Noise Amplifier 27.0 - 31.5 GHz | |
| Low Noise Amplifier 27 GHz - 31.5 GHz | |
| GaN Amplifier, 40 V, 130 W 5.85 - 6.75 GHz | |
| Pin Diode | |
| Double-Balanced Mixer 17 - 47 GHz | |
| Low Noise Amplifier 18 - 26 GHz | |
| GaN Amplifier 50 V, 150 W 8.8 - 9.6 GHz | |
| Low Noise Amplifier, Die 17 - 55 GHz | |
| SPDT Reflective Switch 100 MHz - 9 GHz | |
| MELF PIN Diode | |
| Low Noise Amplifier 27 - 31.5 GHz | |
| Coupler, 10.5 dB 5 - 1800 MHz | |
| GaN High Power Amplifier, 1 W 12.7 - 18.0 GHz | |
| Digital Attenuator, 0.5 dB LSB, 6-Bit 31.5 dB, DC - 40 GHz | |
| Ka Band, Low Noise Amplifier 27.0 - 31.5 GHz | |
| Ka Band, Low Noise Amplifier 27.0 - 31.5 GHz | |
| 2 W, TR Chip 26 - 30 GHz | |
| GaN on SiC Amplifier, 120 W, 28 V DC - 3 GHz | |
| PIN Diode SPDT 120 W Switch 0.05 - 4 GHz | |
| RF GaN Amplifier 70 W peak, 48 V, 3400 – 3800 MHz | |
| GaN Amplifier 50 V, 450 W 0.7 - 2.7 GHz | |
| 4 Channel Transimpedance Amplifier for FMCW LIDAR | |
| 5 W SSPA, 2 - 18 GHz | |
| Amplifier, 2 - 18 GHz | |
| 2.5 W Solid State Power Amplifier, 2 to 18 GHz | |
| 5 W Solid State Power Amplifier, 2 to 18 GHz | |
| 10 W Solid State Power Amplifier, 2 - 18 GHz | |
| 10 W Solid State Power Amplifier, 2 - 18 GHz | |
| 16 W Solid State Power Amplifier, 15 - 18 GHz | |
| 17 W Solid State Power Amplifier, 0.3 - 3 GHz | |
| 5 W Solid State Power Amplifier, 4 - 8 GHz | |
| 3 W Solid State Power Amplifier, 8 - 11 GHz | |
| 2 W Solid State Power Amplifier, 14 - 18 GHz | |
| 2.5 W Solid State Power Amplifier, 2 to 18 GHz | |
| Packaged 17 W SSPA, 0.3 to 3 GHz | |
| 10 W Solid State Power Amplifier, 4 - 6 GHz | |
| 45 W Solid State Power Amplifier, 8 - 12 GHz | |
| 40 W Solid State Power Amplifier, 15.2 to 18.2 GHz | |
| Wideband Fixed Attenuator Family, DIE, DC to 50 GHz | |
| Attenuator Array, DC to 22 GHz, Thru and 2-, 3-, 4-, 5- and 6 dB | |
| Wideband Distributed Amplifier, DIE, 0.8 to 20 GHz | |
| Wideband Distributed Amplifier, DIE, 0.75 to 22 GHz | |
| Wideband Distributed Gain Block, DIE, 1.5 to 19 GHz | |
| 10 W, Wideband GaN Distributed Amplifier, DIE, 2 to 18 GHz | |
| Wideband Distributed Amplifier, DIE, 1 - 19 GHz | |
| Wideband Distributed Amplifier, DIE, 1 - 20 GHz | |
| 2, 3.5 and 5 dB Gain Equalizer Array, 2 to 18 GHz | |
| Lowpass Filter, DIE, 12 GHz | |
| Wideband 50 Ohm Termination, DC - 50 GHz | |
| C- / X-Band Gain Block, DIE, 4 -12 GHz | |
| Wideband Low DC Power LNA DIE, 2 to 18 GHz | |
| Wideband High Gain LNA DIE, 2 to 18 GHz | |
| 12.5 dB Gain pHEMT Low Noise Amplifier, DIE, 12 – 26 GHz | |
| 7-dB Gain pHEMT Low Noise Amplifier, DIE, 13 – 26 GHz | |
| 15-dB Gain pHEMT Low Noise Amplifier, 3 – 8 GHz | |
| 15-dB Gain pHEMT Low Noise Amplifier, 2.0 – 18.0 GHz | |
| 9 dB Gain pHEMT Low Noise Amplifier, DIE, 6 – 13 GHz | |
| 4-W, 50% p.a.e. GaN Power Amplifier, DIE, 8 – 11.5 GHz | |
| 10-W, 65% p.a.e. GaN Power Amplifier, 2.7 – 3.5 GH | |
| GaN Power Amplifier, DIE, 4 – 8 GHz | |
| Wideband Power Divider, DIE, 2 to 18 GHz | |
| Wideband Power Divider, Packaged, 2 - 18 GHz | |
| Wideband Power Divider, DIE, 4 - 13 GHz | |
| Wideband Power Divider, DIE, 6 - 30 GHz | |
| Transmit/Receive Module, 15 - 18 GHz | |
| GaN-on-SiC Transistor, 120 W, 28 V, DC - 4 GHz | |
| GaN-on-SiC Transistor, 60 W, 28 V, DC - 4 GHz | |
| X-Band Low Noise Amplifier, 8 - 12 GHz | |
| 8.5 - 10.5 GHz, 4.5 W GaN High Power Amplifier | |
| GaN High Power Amplifier, 5 W, 8 - 10.5 GHz | |
| GaN Amplifier, 50 V, 630 W, Pulsed, 1.2 - 1.4 GHz | |
| GaN Amplifier, 585 W, 48 V, 1430 - 1520 MHz | |
| High Power RF GaN Amplifier 130 W peak, 48 V, 1800 - 2200 MHz | |
| High Power RF GaN Amplifier, 125 W, 48 V, 2496 - 2690 MHz | |
| LDMOS Transistor, 75 W, 50 V, DC - 1 GHz | |
| GaN-on-SiC Transistor 9.5 W, 48 V, Up to 5000 MHz | |
| Double-Balanced Mixer, 2.5 to 8 GHz | |
| Dual Pair Anti-Parallel Low Magnetic PIN Diode | |
| PIN Diode Switch Element | |
| Silicon Bipolar MMIC Cascadable Amplifier, DC - 2.5 GHz | |
| Silicon Bipolar MMIC Cascadable Amplifier, DC - 2 GHz | |
| Silicon Bipolar MMIC Cascadable Amplifier, DC - 1 GHz | |
| Horizontal Plug-in Diplex Filter | |
| Horizontal Plug-in Diplex Filter, 5-204/258-1800 MHz | |
| GaN Amplifier 28 V, 15 W 0.728 - 0.96 GHz | |
| 2000 V Pin Chip | |
| GaN-on-SiC Transistor, 120 W, 28 V, DC - 4 GHz | |
| GaN-on-SiC Transistor, 45 W, 28 V, DC - 6 GHz | |
| GaN-on-SiC Amplifier, 45 W, 28 V, DC - 6 GHz | |
| 26 Gbps Multi-Rate Burst Mode Laser Driver with Limiting Amplifier, Dual CDRs, Power Management and Diagnostics | |
| Dual 227 Gbps EML Driver with Equalizer | |
| Dual 227 Gbps EML/SiP Driver with Equalizer | |
| 1286 nm and 1300 nm High Power Edge-emitting DFB Laser Chip 25 Gbps with Narrow Far Field | |
| Diode Driver, Supply: -54V, +5V & +60V | |
| Surface Mount Plastic PIN Diodes | |
| Quad Linear 227Gbps PAM4 Transimpedance Amplifier (TIA) For Stacked PD Applications | |
| 17.1 dB Coupler, 5 - 1800 MHz | |
| GaN Amplifier, 480 W, 48 V, 2620 - 2690 MHz | |
| Low Noise Amplifier, 1.85 - 5.0 GHz | |
| 250W; 3.1 - 3.7 GHz; GaN MMIC | |
| Diode Limiter, 2 to 20 GHz | |
| Diode Limiter, 2 to 40 GHz | |
| Low Noise Amplifier, 17 to 55 GHz | |
| Low Noise Amplifier with Bypass, 650 to 4200 MHz | |
| Low Noise Amplifier with Bypass, 1400 to 6000 MHz | |
| Low Noise Amplifier, 13 to 15 GHz | |
| GaN-on-SiC Transistor, 10 W, 28 V, DC - 8 GHz | |
| GaN-on-SiC Transistor, 18 W, 28 V, DC - 8 GHz | |
| GaN-on-SiC Transistor, 30 W, 28 V, DC - 6 GHz | |
| GaN-on-SiC Transistor, 60 W, 28 V, DC - 4 GHz | |
| Si Hi Q Shunt Capacitors 50 V MACOM KV CAPS™ | |
| Si Hi Q Shunt Capacitors 50 V MACOM KV CAPS™ | |
| Si Hi Q Shunt Capacitors 50 V MACOM KV CAPS™ | |
| Low Noise, Low Input Impedance Pre-Amplifier 1.5T and 3T Applications | |
| 3-Way Power Divider 5 - 1800 MHz | |
| Thermally Enhanced GaN Amplifier 400 W, 48 V, 2620 - 2690 MHz | |
| GaN-on-SiC Transistor, 10 W, 28 V, DC - 8 GHz | |
| GaN-on-SiC Transistor, 15 W, 28 V, DC - 8 GHz | |
| GaN-on-SiC Transistor, 30 W, 28 V, DC - 6 GHz | |
| GaN Amplifier 28 V, 7 W 0.7 - 1.5 GHz | |
| 1 W High Performance GaN Travelling Wave Amplifier MMIC | |
| PIN Diode | |
| Low Noise Amplifier 27 - 31.5 GHz | |
| Low Noise Amplifier 22 - 48 GHz | |
| GaN Amplifier Pallet 50 V, 300 W 2400 - 2500 MHz | |
| GaN High Power Amplifier, 40 W 2.0 -6.0 GHz | |
| 7.5W, Power Amplifier 37 - 43 GHz | |
| 8.5 - 10.5 GHz, 16W GaN T/R Module | |
| GaN Amplifier 100 V, 1450 W, 3 - 700 MHz | |
| Coupler, 12.7 dB 5 - 1800 MHz |
