WS1A3640

39.5 dBm GaN-on-SiC Power Amplifier Module; 3300-3800 MHz

The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating GaN-on-SiC HEMT transistors with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 3300 MHz to 3800 MHz; from supply voltages up to 50 V; at average output power levels of 8 to 10 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of 200 MHz or more. The device is housed in a 6 mm X 6 mm land grid array (LGA) package.

Product Specifications

Part Number
WS1A3640
Description
39.5 dBm GaN-on-SiC Power Amplifier Module; 3300-3800 MHz
Min Frequency (MHz)
3300
Max Frequency(MHz)
3800
P3dB Output Power(W)
60
Gain(dB)
13.5
Efficiency(%)
52
Operating Voltage(V)
48
Package Category
Surface Mount
Form
Packaged Discrete Transistor
Technology
GaN-on-SiC

Features

  • Gate bias supplies for main and peaking sub-amplifiers from either side of the device
  • GaN-on-SiC technology
  • Integrated harmonic terminations
  • Pb-free and RoHS compliant
  • Recommended driver is the WSGPA01

Technical Resources

Datasheet


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WS1A3640-V1-R3K
10W avg 48V 3300-3800 MHz GaN SiC Integr
WS1A3640-V1-R3K Distributors