PTVA127002EV-V1

High Power RF LDMOS FET 700 W; 50 V; 1200 - 1400 MHz

The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

Product Specifications

Part Number
PTVA127002EV-V1
Description
High Power RF LDMOS FET 700 W; 50 V; 1200 - 1400 MHz
Min Frequency(MHz)
1200
Max Frequency(MHz)
1400
Peak Output Power(W)
700
Gain(dB)
16.0
Efficiency(%)
56
Operating Voltage(V)
50
Form
Packaged Discrete Transistor
Package Category
Bolt Down
Technology
LDMOS

Features

  • Broadband input and output matching
  • High gain and efficiency
  • Integrated ESD protection
  • Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Excellent ruggedness
  • Pb-free and RoHS compliant

Technical Resources

Datasheet


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PTVA127002EV-V1
LDMOS RF Transistor, 1200?1400MHz, 700W,