PTVA120501EA-V1

High Power RF LDMOS FET 50 W; 50 V; 1200 – 1400 MHz

The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in  the 1200 to 1400 MHz frequency band. Features include high gain and  thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.    

Product Specifications

Part Number
PTVA120501EA-V1
Description
High Power RF LDMOS FET 50 W; 50 V; 1200 – 1400 MHz
Min Frequency(MHz)
1200
Max Frequency(MHz)
1400
Peak Output Power(W)
50
Gain(dB)
17.0
Efficiency(%)
50
Operating Voltage(V)
50
Form
Packaged Discrete Transistor
Package Category
Bolt Down, Push-Pull, Surface Mount
Technology
LDMOS

Features

  • Broadband input matching
  • High gain and efficiency
  • 300 μs pulse width
  • Typical Pulsed CW performance; 1200 – 1400 MHz
  • 50 V
  • 10 % duty cycle
  • Output power at P1dB 54 W
  • Efficiency 55%
  • Gain 16 dB
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS compliant
  • Power Amplifiers in the 1200 to 1400 MHz frequency band; Radar

Technical Resources

Datasheet


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PTVA120501EA-V1
LDMOS RF Transistor, 1200?1400MHz, 54W,