PTVA120501EA-V1
High Power RF LDMOS FET 50 W; 50 V; 1200 – 1400 MHz
The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.
Product Specifications
- Part Number
- PTVA120501EA-V1
- Description
- High Power RF LDMOS FET 50 W; 50 V; 1200 – 1400 MHz
- Min Frequency(MHz)
- 1200
- Max Frequency(MHz)
- 1400
- Peak Output Power(W)
- 50
- Gain(dB)
- 17.0
- Efficiency(%)
- 50
- Operating Voltage(V)
- 50
- Form
- Packaged Discrete Transistor
- Package Category
- Bolt Down, Push-Pull, Surface Mount
- Technology
- LDMOS
Features
- Broadband input matching
- High gain and efficiency
- 300 μs pulse width
- Typical Pulsed CW performance; 1200 – 1400 MHz
- 50 V
- 10 % duty cycle
- Output power at P1dB 54 W
- Efficiency 55%
- Gain 16 dB
- Integrated ESD protection
- Low thermal resistance
- Pb-free and RoHS compliant
- Power Amplifiers in the 1200 to 1400 MHz frequency band; Radar