MAAP-011410-DIE
10W, Ka Band Power Amplifier
The MAAP-011410-DIE is a 10W high-performance GaN Power Amplifier MMIC designed to operate from 27 GHz to 31 GHz and is offered in bare die form. It is full matched across the frequency band. The MAAP-011410-DIE has 40.5 dBm of output power and 22% PAE and can be used an a power amplifier stage. This device is ideally suited to satellite communication and radar applications. The MAAP-011410-DIE is manufactured using MESC high performance 100 nm gate length GaN on Si HEMT power technology (D01GH). The MMIC uses gold bonding pads and backside metallization and is fully protected with Silicon Nitride passivation to obtain the highest level of reliability.
Product Specifications
- Part Number
- MAAP-011410-DIE
- Description
- 10W, Ka Band Power Amplifier
- Min Frequency(MHz)
- 27000
- Max Frequency(MHz)
- 31000
- Gain(dB)
- 22.0
- PSAT(dBm)
- 40
- Bias Current(mA)
- 600
- Package
- Lead-Free
- Package Category
- Die
- Rohs
- Yes
Features
- Gain: 22 dB
- Output Power: 40.5 dBm @ 29GHz
- PAE: 22%
- Power Supply: 12 V, 4 A @ saturated power
- 50Ω Input & Output Matched
- Chip Size: 4.39mm x 3.5mm x 0.1mm
- RoHS* Compliant