GTRA214602FC

High Power RF GaN-on-SiC HEMT, 490 W, 48 V, 2110 - 2170 MHz

The GTRA214602FC is a 490-watt (P3dB) GaN-on-SiC HEMT D-mode amplifier designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.

Product Specifications

Part Number
GTRA214602FC
Description
High Power RF GaN-on-SiC HEMT, 490 W, 48 V, 2110 - 2170 MHz
Min Frequency (MHz)
2110
Max Frequency(MHz)
2170
P3dB Output Power(W)
490
Gain(dB)
14.4
Efficiency(%)
59
Operating Voltage(V)
48
Package Category
Earless
Form
Packaged Discrete Transistor
Technology
GaN-on-SiC

Features

  • Input matched
  • Asymmetric Doherty design: Main: P3dB = 170 W Typ
  • Peak: P3dB = 350 W Typ
  • Typical pulsed CW performance: 16 μs pulse width, 10% duty cycle, 2140 MHz, 48 V; Doherty fixture: Gain = 15 dB @ 49 dBm
  • Efficiency = 59% @ 49 dBm
  • Output power at P3dB = 490 W

Technical Resources

Datasheet


Order from MACOM

GTRA214602FC-V1
Subassembly, GTRA214602FC-V1