CMPA0530002
2 W; 0.5 - 3.0 GHz; Input Matched to 50 ohms, GaN MMIC for Pre-driver/Driver Amplifier Applications
The CMPA0530002 is a packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). The MMIC power amplifier is matched to 50-ohms on the input. The CMPA0530002 operates on a 28 volt rail while housed in a 3mm x 4mm; surface mount; dual-flat-no-lead (DFN) package. Under reduced power; the transistor can operate below 28V to as low as 20V VDD; maintaining high gain and efficiency.
Product Specifications
- Part Number
- CMPA0530002
- Description
- 2 W; 0.5 - 3.0 GHz; Input Matched to 50 ohms, GaN MMIC for Pre-driver/Driver Amplifier Applications
- Min Frequency(MHz)
- 500
- Max Frequency(MHz)
- 3000
- Peak Output Power(W)
- 2
- Gain(dB)
- 18.0
- Efficiency(%)
- 52
- Operating Voltage(V)
- 28
- Form
- Packaged MMIC
- Package Category
- Surface Mount
- Technology
- GaN-on-SiC
Features
- 18 dB Small Signal Gain
- 2.9 W Typical PSAT
- Operation up to 28 V
- High Breakdown Voltage
- High Temperature Operation
- Size 0.118 x 0.157 x 0.033 inches