CGY2170YHV

6-Bit, X-Band Core Chip

The CGY2170YHV/C1 is a high performance GaAs MMIC T/R 6-bit core chip operating in X-band. It exhibits 3 RF ports including 3 switches. It includes a 6-bit phase shifter, a 6-bit attenuator, and switches. It has a phase shifting range of 360° and a gain setting range of 31.5 dB. It covers the frequency range from 8 to 12 GHz and provide 5.8 dB of gain at 10 GHz. The on-chip control logic with serial input register minimizes the number of bonding pads and greatly simplifies the interfacing to this device. This die is manufactured using 0.18 μm gate length ED02AH pHEMT technology. The MMIC uses gold bond pads and backside metallization and is fully protected with silicon nitride passivation to obtain the highest level of reliability. This technology has been evaluated for space applications and is on the European preferred parts list of the European space agency.

Product Specifications

Part Number
CGY2170YHV
Description
6-Bit, X-Band Core Chip
Min Frequency(GHz)
8
Max Frequency(GHz)
12
Transmit Gain(dB)
6
Transmit P1dB(dBm)
12
Receive Gain(dB)
6
Package
QFN

Features

  • Gain Tx/Rx: 5.8 dB @ 10 GHz
  • RMS Phase Error: 4.0° @ 9 - 10 GHz
  • RMS Amplitude Error: 0.5 dB @ 8 - 11 GHz
  • Output P1dB Tx: 12 dBm
  • Output P1dB Rx: 12 dBm
  • Return Loss: < -12 dB @ 10 GHz (all states)
  • Total Power Consumption: 0.36 W
  • QFN Size: 7 x 7 x 0.9 mm
  • Tested, Inspected Known Good Die (KGD)
  • Samples Available
  • RoHS* Compliant

Technical Resources

Datasheet


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CGY2170YHV
6-Bit, X-Band Core Chip