CGHV40030

30 W; DC - 6 GHz; 50 V; GaN HEMT

The CGHV40030 is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high efficiency; high gain and wide bandwidth capabilities. The device can be deployed for L; S and C-Band amplifier applications. The data sheet specifications are based on a 0.96 - 1.4 GHz amplifier. The CGHV40030 operates on a 50-volt rail circuit while housed in a 2-lead flange or pill package.

Product Specifications

Part Number
CGHV40030
Description
30 W; DC - 6 GHz; 50 V; GaN HEMT
Min Frequency(MHz)
0
Max Frequency(MHz)
6000
Peak Output Power(W)
30
Gain(dB)
16.0
Efficiency(%)
70
Operating Voltage(V)
50
Form
Packaged Discrete Transistor
Package Category
Flange, Pill
Technology
GaN-on-SiC

Features

  • Up to 6 GHz Operation
  • 30 W Typical Output Power
  • 16 dB Gain
  • Application circuit for 0.96 � 1.4 GHz
  • 70% Efficiency at PSAT
  • 50 V Operation

Order from MACOM

CGHV40030F
30W, GaN HEMT, DC-4.0GHz, 50V, 830238F,
CGHV40030F Distributors
CGHV40030F-AMP2
EVB, 0.5 - 3.0 GHz, 25W, 45%, 10dB
CGHV40030F-AMP2 Distributors
CGHV40030P
30W, GaN HEMT, DC-4.0GHz, 50V, 830238P,
CGHV40030P Distributors