CGHV35150

150 W; 2900 - 3500 MHz; 50 V; GaN HEMT for S-Band Radar Systems

The CGHV35150 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT)  designed specifically with high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGHV35150 ideal for 2.9 – 3.5-GHz S-band radar-amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package. 

Product Specifications

Part Number
CGHV35150
Description
150 W; 2900 - 3500 MHz; 50 V; GaN HEMT for S-Band Radar Systems
Min Frequency(MHz)
2900
Max Frequency(MHz)
3500
Peak Output Power(W)
150
Gain(dB)
13.5
Efficiency(%)
50
Operating Voltage(V)
50
Form
Packaged Discrete Transistor
Package Category
Flange, Pill
Technology
GaN-on-SiC

Features

  • Rated Power = 150 W @ TCASE = 85°C
  • Operating Frequency = 2.9 – 3.5 GHz
  • Transient 100 μsec – 300 μsec @ 20% Duty Cycle
  • 13.5 dB Power Gain @ TCASE = 85°C
  • 50 % Typical Drain Efficiency @ TCASE = 85°C
  • Input Matched
  • <0.3 dB Pulsed Amplitude Droop

Technical Resources

Datasheet

Model Data (Sparameters)


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