CGH60030D-GP4

30 W; 6.0 GHz; GaN HEMT Die

The CGH60030D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity; and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

Product Specifications

Part Number
CGH60030D-GP4
Description
30 W; 6.0 GHz; GaN HEMT Die
Min Frequency(MHz)
0
Max Frequency(MHz)
6000
Peak Output Power(W)
30
Gain(dB)
12.0
Efficiency(%)
65
Operating Voltage(V)
28
Form
Discrete Bare Die
Package Category
Die
Technology
GaN-on-SiC

Features

  • 30 W Typical PSAT
  • 28 V Operation
  • High Breakdown Voltage
  • High Temperature Operation
  • Up to 6 GHz Operation
  • High Efficiency

Order from MACOM

CGH60030D-GP4
DIE, 30W, 6.0GHz, GaN HEMT, 510398,7.2mm
CGH60030D-GP4 Distributors