CGH27015P

15 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz

The CGH27015 is a gallium-nitride (GaN) high-electron-mobility transistor designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G,  4G, LTE,   2.3 – 2.9-GHz  WiMAX and BWA amplifier applications. The unmatched transistor is available in both screw-down flange and solder-down pill packages.

Product Specifications

Part Number
CGH27015P
Description
15 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
Min Frequency(MHz)
0
Max Frequency(MHz)
6000
Peak Output Power(W)
15
Gain(dB)
14.5
Efficiency(%)
28
Operating Voltage(V)
28
Form
Packaged Discrete Transistor
Package Category
Pill
Technology
GaN-on-SiC

Features

  • VHF – 3.0 GHz Operation
  • 15 W Peak Power Capability
  • 14.5 dB Small Signal Gain
  • 2 W PAVE < 2.0% EVM
  • 28% Efficiency at 2 W Average Power

Technical Resources

Datasheet


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CGH27015P
15 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz