MAPC-A2519
GaN Amplifier 50 V, 90 W AVG
The MAPC-A2519 is a high power GaN on silicon carbide HEMT D-mode amplifier suitable for asymmetrical Doherty applications with 85 W average power and optimized for 2.3 - 2.4 GHz modulated signal operation. The device supports pulsed, and linear operation with peak output power levels to 600 W (57.8 dBm) in an air cavity ceramic package.
Product Specifications
- Part Number
- MAPC-A2519
- Description
- GaN Amplifier 50 V, 90 W AVG
- Min Frequency(MHz)
- 2300
- Max Frequency(MHz)
- 2400
- Supply Voltage(V)
- 50
- PSAT Watt(W)
- 90.0
Features
- MACOM PURE CARBIDE® Amplifier Series
- Optimized for Modulated Signal Applications
- Optimized for Asymmetrical Doherty Application
- High Terminal Impedances for Broadband Performance
- 50 V Operation
- 100% RF Tested
- RoHS* Compliant