MAPC-A2503
GaN Amplifier 50 V, 60 W AVG
The MAPC-A2503 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for asymmetrical Doherty base station applications with 60W average power and optimized for 3.7 - 4.0 GHz modulated signal operation. The device supports pulsed, and linear operation with peak output power levels to 450W (56.5 dBm) in an air cavity ceramic package.
Product Specifications
- Part Number
- MAPC-A2503
- Description
- GaN Amplifier 50 V, 60 W AVG
- Min Frequency(MHz)
- 3700
- Max Frequency(MHz)
- 4000
- Supply Voltage(V)
- 50
- PSAT Watt(W)
- 60.0
- Gain(dB)
- -2.0
Features
- MACOM PURE CARBIDE® Amplifier Series
- Optimized for Cellular Base Station Applications
- Designed for Digital Predistortion Error Correction Systems
- Optimized for Asymmetrical Doherty Application
- High Terminal Impedances for Broadband Performance
- 50 V Operation
- 100% RF Tested
- RoHS* Compliant